A Short History of Atomic Layer Deposition: Tuomo Suntola's Atomic Layer Epitaxy

Atomic Layer Deposition of TiO

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Atomic layer deposition: an overview.

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amo...

Atomic layer deposition of ZnS nanotubes.

We report on the growth of high-aspect-ratio (approximately > 300) zinc sulfide nanotubes with variable, precisely tunable, wall thicknesses and tube diameters into highly ordered pores of anodic alumina templates by atomic layer deposition (ALD) at temperatures as low as 75 degrees C. Various characterization techniques are employed to gain information on the composition, morphology and crysta...

Atomic Layer Deposition of Aluminum Oxide

I Acknowledgements II Dedication III List of Figures V